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STH110N10F7-6 |
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| Part Number | STH110N10F7-6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for... |
| Features |
Order code
STH110N10F7-2 STH110N10F7-6
VDS 100 V
RDS(on) max.
6.5 mΩ
ID PTOT 110 A 150 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7... |
| Document |
 STH110N10F7-6 Data Sheet
PDF 694.21KB |
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Desde 2024. D4U Semiconductor.
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