STH110N7F6-2 |
Part Number | STH110N7F6-2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 ... |
Features |
TAB 2 3 1
H2PAK-2
Figure 1. Internal schematic diagram
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Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STH110N7F6-2 Table 1. Device summary Marking Package 110N7F6 H2PAK-2 March ... |
Document |
STH110N7F6-2 Data Sheet
PDF 911.20KB |
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