STH110N7F6-2 STMicroelectronics N-CHANNEL POWER MOSFET Datasheet. existencias, precio

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STH110N7F6-2

STMicroelectronics
STH110N7F6-2
STH110N7F6-2 STH110N7F6-2
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Part Number STH110N7F6-2
Manufacturer STMicroelectronics (https://www.st.com/)
Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6   ...
Features TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram ' 7$% *  Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6   $0Y Order code STH110N7F6-2 Table 1. Device summary Marking Package 110N7F6 H2PAK-2 March ...

Document Datasheet STH110N7F6-2 Data Sheet
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