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STI100N10F7 |
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| Part Number | STI100N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char... |
| Features |
Order codes
VDS
RDS(on) max.
ID
STB100N10F7
80 A
STD100N10F7
80 A
STF100N10F7
100 V
8.0 mΩ
45 A
STI100N10F7
80 A
STP100N10F7
80 A
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220 Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and... |
| Document |
 STI100N10F7 Data Sheet
PDF 666.24KB |
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Desde 2024. D4U Semiconductor.
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