STD130N6F7 |
Part Number | STD130N6F7 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
Features |
Order code STD130N6F7
VDS 60 V
RDS(on) max. 5.0 mΩ
ID 80 A
PTOT 134 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD130N6F7 AM01475... |
Document |
STD130N6F7 Data Sheet
PDF 553.51KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STD130N6F7 |
INCHANGE |
N-Channel MOSFET | |
2 | STD130N4F6AG |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD130 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
4 | STD13003 |
AUK |
NPN Silicon Power Transistor | |
5 | STD13003 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
6 | STD13003D |
KODENSHI |
NPN Silicon Power Transistor |