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STW265N6F6AG |
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| Part Number | STW265N6F6AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code... |
| Features |
Order code STW265N6F6AG
VDS 60 V
RDS(on) max 2.85 mΩ
ID 180 A
Designed for automotive applications Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STW265N6F6AG Table 1: Device summary Marking 265N6F6 Package TO-247 Packing Tube November 2016 DocID029961 Rev 1 This is preliminary i... |
| Document |
 STW265N6F6AG Data Sheet
PDF 514.67KB |
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Desde 2024. D4U Semiconductor.
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