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STP110N55F6 |
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| Part Number | STP110N55F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. * 6... |
| Features |
TAB
3 2 1
TO-220
Order code STP110N55F6
VDS 55 V
RDS(on) max. ID 5.2 mΩ 110 A
• Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. * 6 $0Y Order code STP110N55F6 Table 1. Device summary Marking Packages 110N55F6 TO-220 Packaging Tube July 2014 This is informatio... |
| Document |
 STP110N55F6 Data Sheet
PDF 622.61KB |
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