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STL210N4F7AG |
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| Part Number | STL210N4F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STL210N4F7AG
V DS 40 V
RDS(on) max 1.6 mΩ
ID 120 A
Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code ... |
| Document |
 STL210N4F7AG Data Sheet
PDF 789.90KB |
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Desde 2024. D4U Semiconductor.
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