GF100N30 STMicroelectronics IGBT Datasheet. existencias, precio

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GF100N30

STMicroelectronics
GF100N30
GF100N30 GF100N30
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Part Number GF100N30
Manufacturer STMicroelectronics (https://www.st.com/)
Description duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) ...
Features
■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology
■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247
■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )
■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrde...

Document Datasheet GF100N30 Data Sheet
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