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G10M65DF2 |
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| Part Number | G10M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system pe... |
| Features |
6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C Applications Motor control UPS PFC General purpose inverter Order code STGB10M65DF2 Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system perfo... |
| Document |
 G10M65DF2 Data Sheet
PDF 943.40KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G1000LL250 |
IXYS |
Anode-Shorted Gate Turn-Off Thyristor |
|
| 2 | G1000LM250 |
IXYS |
Anode-Shorted Gate Turn-Off Thyristor |
|
| 3 | G1000NC450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 4 | G1000NL450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 5 | G1000QC250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 6 | G1000QC400 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
Desde 2024. D4U Semiconductor.
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