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CS3N20ATH |
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| Part Number | CS3N20ATH |
| Manufacturer | Huajing Microelectronics |
| Description | CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance... |
| Features |
l Fast Switching
200 3 2.5 1.2
l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Ga... |
| Document |
 CS3N20ATH Data Sheet
PDF 386.19KB |
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Desde 2024. D4U Semiconductor.
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