Busque con el número de pieza junto con el fabricante o la descripción
E7N65 |
Click to view a larger image
| Part Number | E7N65 |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi... |
| Features |
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Value Parameter Symbol 7N65/I7N65/E7N65 /B7N65/D7N65 Maximum Drian-Source... |
| Document |
 E7N65 Data Sheet
PDF 1.28MB |
Desde 2024. D4U Semiconductor.
|