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I7N65 |
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| Part Number | I7N65 |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi... |
| Features |
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Value Parameter Symbol 7N65/I7N65/E7N65 /B7N65/D7N65 Maximum Drian-Source... |
| Document |
 I7N65 Data Sheet
PDF 1.28MB |
| Distributor | Stock | Price | Buy |
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Desde 2024. D4U Semiconductor.
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