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STB155N3H6 |
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| Part Number | STB155N3H6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Fi... |
| Features |
Order codes STB155N3H6 STD155N3H6
VDSS 30 V 30 V
RDS(on) max < 3 mΩ < 3 mΩ
ID 80 A (1) 80 A (1)
1. Limited by wire bonding
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications ■ Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STB155N3H6 STD155... |
| Document |
 STB155N3H6 Data Sheet
PDF 921.79KB |
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Desde 2024. D4U Semiconductor.
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