AM50P02-09D |
Part Number | AM50P02-09D |
Manufacturer | Analog Power |
Description | Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device idea... |
Features |
rent (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS VGS TA=25oC ID IDM
-20 V
±12
18 A
±100
IS
-30
A
TA=25oC PD
70
W
TJ, Tstg -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum 30 1.8
Units oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
January, 2005 - Rev. A PRELIMINARY
1
Publication Order Number:
DS-AM50P02-09_D
Analog Power
AM50P02-09D
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NO... |
Document |
AM50P02-09D Data Sheet
PDF 136.17KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AM50P02-16D |
Analog Power |
P-Channel MOSFET | |
2 | AM50P03-09D |
Analog Power |
P-Channel MOSFET | |
3 | AM50P03-10D |
Analog Power |
P-Channel MOSFET | |
4 | AM50P04-20D |
Analog Power |
MOSFET | |
5 | AM50P06-15D |
Analog Power |
MOSFET | |
6 | AM50P10-117P |
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MOSFET |