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AM35N03-59D |
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| Part Number | AM35N03-59D |
| Manufacturer | Analog Power |
| Description | Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. ... |
| Features |
IDM
30 V
±12
24 A
40
IS
30
A
TC=25oC PD
50
W
TJ, Tstg -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50 3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM35N03-59_C
Analog Power
AM35N03-59D
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain ... |
| Document |
 AM35N03-59D Data Sheet
PDF 136.01KB |
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