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AM5829P |
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| Part Number | AM5829P |
| Manufacturer | Analog Power |
| Description | Analog Power AM5829P P-Channel 20-V (D-S) MOSFET With Schottky Diode These miniature surface mount MOSFETs utilize a MOSFET PRODUCT SUMMARY high cell density trench process to provide low VDS (V... |
| Features |
Drain-Source Voltage (MOSFET)
VDS
-20
Reverse Voltage (Schottky)
VKA
20
V
Gate-Source Voltage (MOSFET)
VGS
±8
Continuous Drain Current (TJ=150oC) (MOSFET)a
TA=25oC TA=70oC
ID
±2.5 ±1.9
Pulsed Drain Current (MOSFET)b Continuous Source Current (MOSFET Diode Conduction)a
IDM
±10
A
IS
-1.6
Average Forward Current (Schottky)
IF
0.5
Pulsed Forward Current (Schottky)
IFM
8
Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range
TA=25oC
2.1
TA=70oC TA=25oC
PD
1.1 W
1.3
TA=70oC
0.68
TJ, Tstg -55 to 150... |
| Document |
 AM5829P Data Sheet
PDF 250.17KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM5810 |
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| 2 | AM5853 |
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| 3 | AM5853J8R |
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| 4 | AM5853J8VR |
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| 5 | AM5868 |
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| 6 | AM5868S |
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Desde 2024. D4U Semiconductor.
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