HM2302BKR |
Part Number | HM2302BKR |
Manufacturer | H&M Semiconductor |
Title | N-Channel Enhancement Mode Power MOSFET |
Features |
● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding DSC N-Channel 3D 2302 G1 2S Marking and pin Assignment S... |
Document |
HM2302BKR Data Sheet
PDF 557.59KB |
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