2N665 |
Part Number | 2N665 |
Manufacturer | Motorola |
Description | 2N665 (GERMANIUM) CASE~ (TO-3) PNP germanium power transistor for driver and power output amplifier and power switching applications in military and industrial equipment. MAXIMUM RATINGS Rating Col... |
Features |
,lc = -2 Ade)
Emitter Cutoff Current
(VEBO = -30 Vdc, Ie = 0, TC = +71OC min)
Collector Cutoff Current
(VCBO = -30 Vde, IE • 0, TC = +71oC min) Symbol lEBO IeBO bFE VEB VEBF VCE(sat) VCEO fae lEBO ICBO Value 80 40 3.0 5.0 -85 to +95 35 0.5 Unit Vdc Vdc Amp Amp °c watts W/oC Min Max Unit - mAdc 2.0 --- mAdc 0.05 :2.0 10 40 20 -80 -- - Vdc 1.5 Vdc - 1.0 - Vde -0.9 40 - Vde 20 - kHz - mAde 2.0 - mAde 2.0 2-57 2N665 (continued) 200 ..,u 180 0 N 160 ......!C 140 II! 120 / ./ 0 ';/I. 100 80 -60 / le-2A / -40 -20 hFE.versus TEMPERATURE Yco - 2Y -le- 0 •5A... |
Document |
2N665 Data Sheet
PDF 111.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
2 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
3 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS | |
4 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS | |
5 | 2N6609 |
NTE |
Silicon PNP Transistor | |
6 | 2N6609 |
Inchange Semiconductor |
Silicon PNP Power Transistor |