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2N307 |
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| Part Number | 2N307 |
| Manufacturer | Motorola |
| Description | 2N242 (GERMANIUM) 2N307, A CASE1~ PNP germanium power transistors for general pur- (TO_3lI1~ pose power amplifier and switching applications_ MAXIMUM RATINGS Rating Collector - Base Voltage Collector... |
| Features |
= 20 mAdc) (lC = 1. 0 Adc, IB = 100 mAdc)
DC Current Gain (VCE = 12 Vdc, IC = 500 mAdc)
(VCE = 1 Vdc,.IC = 200 mAdc)
Common Emitter Cutoff Frequency (VCE = 12 V. IC = 0.5 A)
(VCE = 6 V. IC = 1 A)
Power Gain
(IC = 0.5 A. VCE = -14 V, RL = 301'l.
Rg=101'l)
2N307 2N307 2N307A 2N242
2N242 2N242 2N307 2N307A
2N242
2N242 2N307 2N307A
2N242 2N307 2N307A
2N242 2N307A 2N307
2N242
Symbol
ICBO
lEBO ICER
VBE VCE(sat) hFE lae G"
Min
----
-
-
--
0.3
---
30 20 30
5.0 3.5 3.0
30
Max
0.5 5.0 2.0 5.0
2.0
5.0 1.0 15 7.0
0.8
0.8 1.0 0.8
1-20
-
-
-
-
Unit
mAdc
mAdc mAdc
Vdc Vdc
kHz
dB
2-10
... |
| Document |
 2N307 Data Sheet
PDF 62.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3001 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS |
|
| 2 | 2N3002 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS |
|
| 3 | 2N3003 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS |
|
| 4 | 2N3004 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS |
|
| 5 | 2N3007 |
Seme LAB |
Bipolar NPNP Device |
|
| 6 | 2N3009 |
Central Semiconductor Corp |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
|
| 7 | 2N3009 |
Motorola |
NPN Transistor |
|
| 8 | 2N3010 |
Motorola |
NPN silicon low-power transistor |
|
| 9 | 2N3011 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 10 | 2N3011 |
Seme LAB |
Bipolar NPN Device |
|
Desde 2024. D4U Semiconductor.
|