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2N721 |
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| Part Number | 2N721 |
| Manufacturer | Motorola |
| Description | 121 2N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications. CASE 22 (TO.18) Collector connected to case MAXIMUM RAilNGS Rating Symbol Collector-Em... |
| Features |
mitter Cutoff Current (VBE = 2. 0 Vde, IC = 0)
BV CEO(sus>*
35
-
BVCER(suS)*
50
-
BVCBO 50
-
ICBO
-
1.0
-
100
lEBO
-
100
ON CHARACTERISTICS
DC Current GaIn. (IC = 150 mAde, VCE = 10 Vde) (IC = 5. 0 mAde, ,VCE = 10 Vde)
Collector-Emitter Saturation Voltage
Ia (IC = 150 mAde, = 15 mAde)
Base-Emitter Saturation Voltage (IC = 150 mAde, IB = 15 mAde)
• hFE 20 45 15 - VCE(sat) - 1.5 VBE(sst>. - 1.3 SMALL SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 50 mAde,. VCE'= 10 Vde, f = 20 MHz) Output Capacitance (VCB =10 Vde, ~ = 0, f = 100 kHz) Input Capacitance ... |
| Document |
 2N721 Data Sheet
PDF 97.93KB |
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