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2N2477 |
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| Part Number | 2N2477 |
| Manufacturer | Motorola |
| Description | 2N2476 (SILICON) 2N2477 NPN silicon annular transistors designed for highspeed, low-power saturated switching applications. CASE 31 (TO-5) Collector connected td case MAXIMUM RATINGS Rating Symbol... |
| Features |
os. oth.",; • • noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (11 (IC = 50 mAde, IB = 0) Collector-Base Breakdown Voltage (Ic = 10 uAde, IE = 0) Emitter-Base Breakdown Voltage (~ ~ 100 uAdc, IC = 0) Collector Cutoff Current (V CB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, T A = 150°C) Emitter Cutoff Current (V BE = 5.0 Vde, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 150 mAde, VCE = O. 4 Vde) Collector-Emitter Saturation Voltage (IC = 150 mAde. IB = 7.5 mAde) (IC = 150 mAde. IB = 3.75 mAde) (IC = 500 mAde, IB = .50 mAde) Base-Emitter Saturation Voltage (IC = 1... |
| Document |
 2N2477 Data Sheet
PDF 107.63KB |
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