2N3081 |
Part Number | 2N3081 |
Manufacturer | Motorola |
Description | 3081 2N (SIUCON) PNP SILICON ANNULAR TRANSISTOR · .. designed for medium-speed switching and general-purpose amplification applications in industrial service. • High Collector-Base Breakdown Voltage... |
Features |
eOPE Inputlmpedance>1.0k
Capacitance" 5.0 pF
51
Rise Time "1.0 ns
~l;~DlA~
O,305 D1A
0.240
=Qm ·rm=tI 1.5 Pin 1. Base 2. Emitter 3. Collector ilLJ Input at Point "A" Output + -15o1 1 ~-5 rj;:~1J.~0",-"~~~- ltd, tr I Itsl tf I ~~ ~ O%: :1 I II I 90% 4~8~9 0.004 [Q45 CASE 3111) TO-5 Collector Connected to Case To convert inches to millimeters multiply by 25.4. 2-423 2N3081 (continued), *ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I ~haracteristic I Symbol Min OFF CHARACTERISTICS Collector ·Emitter Sustaining Voltage (lC = 10 mAde, IB = 0) Collec... |
Document |
2N3081 Data Sheet
PDF 99.73KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3001 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS | |
2 | 2N3002 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS | |
3 | 2N3003 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS | |
4 | 2N3004 |
Digitron Semiconductors |
SILICON REVERSE BLOCKING THYRISTORS | |
5 | 2N3007 |
Seme LAB |
Bipolar NPNP Device | |
6 | 2N3009 |
Central Semiconductor Corp |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |