2N4012 |
Part Number | 2N4012 |
Manufacturer | Motorola |
Description | 12 2N40 (SILICON) ~E3~ (TO·60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rati... |
Features |
CONDUCTOR ~ 4" 00 TUBE OUTPUT DIRECT COUPLE ~ I" FROM SHORTED END
f." ~ 1002 MHz
2-697
2N4012 (continued)
ELECTRICAL CHARACTERISTICS (TC; 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I) (Ic = 0 to 200 mAdc, IB = 0)
BVCEO
40 - -
Collector-Emitter Breakdown Voltage /11 (IC = 0 to 200 mAdc, VEB(Off) = I. 5 Vdc)
BVCEV
65 - -
Collector-Base Breaxdown Voltage (IC = O. I mAdc, IE = 0)
BVCBO
65 - -
Emitter-Base Breakdown Voltage (IE = O. I mAdc, IC = 0)
BVEBO
4- -
Collector Cutoff Current (VCE = 30 Vdc, IB =... |
Document |
2N4012 Data Sheet
PDF 97.13KB |
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