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BDT31BF |
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| Part Number | BDT31BF |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement ... |
| Features |
ange
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
1
A
22
W
150
℃
-65~15 0
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
55 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BDT31F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT31F
40
BDT31AF
60
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT31BF
IC= 30mA; IB= 0
80
V
BDT31CF
100
VCE(sat) VBE(on)
Collector-Emitter Sat... |
| Document |
 BDT31BF Data Sheet
PDF 231.56KB |
Desde 2024. D4U Semiconductor.
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