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STP6N80K5 |
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| Part Number | STP6N80K5 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in... |
| Features |
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS
STP6N80K5
800 V
• Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A G(1) • Switching applications Description S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and hig... |
| Document |
 STP6N80K5 Data Sheet
PDF 616.29KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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