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R2619ZC21J |
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| Part Number | R2619ZC21J |
| Manufacturer | YZPST |
| Description | YANGZHOU POSITIONING TECH. CO., LTD HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS R2619ZC21J Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximu... |
| Features |
. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1)
VDRM (1)
2100
2100
VRSM (1) 2200
VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage
IRRM / IDRM
Critical rate of voltage rise
dV/dt (4)
20 mA 200 mA (3)
200 V/sec
Notes: All ratings are specified for Tj=25 oC unless otherwise ... |
| Document |
 R2619ZC21J Data Sheet
PDF 133.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | R2619ZC21J |
IXYS |
Distributed Gate Thyristor |
|
| 2 | R2619ZC21K |
IXYS |
Distributed Gate Thyristor |
|
| 3 | R2619ZC21L |
IXYS |
Distributed Gate Thyristor |
|
| 4 | R2619ZC20J |
IXYS |
Distributed Gate Thyristor |
|
| 5 | R2619ZC20K |
IXYS |
Distributed Gate Thyristor |
|
| 6 | R2619ZC20L |
IXYS |
Distributed Gate Thyristor |
|
Desde 2024. D4U Semiconductor.
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