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ADM40N06E |
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| Part Number | ADM40N06E |
| Manufacturer | ADV |
| Description | ADV ADM40N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 40A RDS(ON) (mΩ) 18mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ... |
| Features |
f Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th) IGSS RDS(ON) gFS
Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵
VGS=0V, IDS=250uA VDS= 48V, VGS=0V VDS=48V, VGS=0V TJ=85°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=15A VDS= 10V, IDS=15A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS= 25V, Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
tr
Turn-on Rise Time⑴
td(OFF)
Turn-... |
| Document |
 ADM40N06E Data Sheet
PDF 336.02KB |
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Desde 2024. D4U Semiconductor.
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