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GSM2320Y Globaltech N-Channel MOSFET Datasheet


Globaltech
GSM2320Y
Part Number GSM2320Y
Manufacturer Globaltech
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes...
Features „ 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.5V Gate Drive Applications „ Green Device Available „ SOT-523 package design Applications „ Notebook „ Load Switch „ Hand-Held Instruments „ Battery Protection Packages & Pin Assignments GSM2320YX7F (SOT-523) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM2320Y www.gs-power.com 1 Marking Information Part Number GSM2320YX7F BYM Package SOT-523 Part Number Date Code GS Code Part Marking BYM Quantity 3000pcs Absolute Ma...

Document Datasheet GSM2320Y datasheet pdf (529.33KB)




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GSM2320Y Similar Datasheet

Part Number Description
GSM2320P
manufacturer
Globaltech
N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.2V Gate Drive Applications „ Green Device Available „ SOT-323 package design Applications „ Notebook „ Load Switch „ Battery Protection „ Hend-Held Instruments Packages & Pin Assignments GSM2320PX5F (SOT-323) Top Views ...




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