IPC100N04S5L-1R9 |
Part Number | IPC100N04S5L-1R9 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPC100N04S5L-1R9 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhan... |
Features |
• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) 1 1 • 100% Avalanche tested Type IPC100N04S5L-1R9 Package Marking PG-TDSON-8-34 5N04L1R9 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche cur... |
Document |
IPC100N04S5L-1R9 Data Sheet
PDF 402.89KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPC100N04S5L-1R1 |
Infineon |
Power-Transistor | |
2 | IPC100N04S5L-1R5 |
Infineon |
Power-Transistor | |
3 | IPC100N04S5L-2R6 |
Infineon |
Power-Transistor | |
4 | IPC100N04S5-1R2 |
Infineon |
Power-Transistor | |
5 | IPC100N04S5-1R7 |
Infineon |
Power-Transistor | |
6 | IPC100N04S5-1R9 |
Infineon |
Power-Transistor |