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3SK302 |
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| Part Number | 3SK302 |
| Manufacturer | Panasonic |
| Description | High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional ... |
| Features |
q Though low voltage operation, performance is equivalent to the conventional product.
q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
3SK302
0.65±0.15
+0.2
2.8 –0.3 +0.2 1.5 –0.3 Unit : mm 0.65±0.15 0.5R 41 2.9±0.2 1.9±0.2 0.95 0.95 32 +0.1 0.4 –0.05 0 to 0.1 +0.1 0.16 –0.06 +0.2 1.1 –0.1 0.8 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Drain-Source voltage Gate 1-Source voltage Gate 2-Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S IDS P... |
| Document |
 3SK302 Data Sheet
PDF 24.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK300 |
Hitachi Semiconductor |
Silicon N-Channel Transistor |
|
| 2 | 3SK306 |
Panasonic |
Silicon N-Channel MOS |
|
| 3 | 3SK309 |
Hitachi Semiconductor |
UHF RF Amplifier |
|
| 4 | 3SK317 |
Hitachi Semiconductor |
UHF / VHF RF Amplifier |
|
| 5 | 3SK318 |
Hitachi Semiconductor |
UHF RF Amplifier |
|
| 6 | 3SK319 |
Hitachi Semiconductor |
UHF RF Amplifier |
|
Desde 2024. D4U Semiconductor.
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