K4S560832E-UC75 |
Part Number | K4S560832E-UC75 |
Manufacturer | Samsung |
Description | SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change produ... |
Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positi... |
Document |
K4S560832E-UC75 Data Sheet
PDF 195.84KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K4S560832E-NC75 |
Samsung semiconductor |
SDRAM 256Mb E-die | |
2 | K4S560832E-NCL75 |
Samsung semiconductor |
SDRAM 256Mb E-die | |
3 | K4S560832E-TC75 |
Samsung semiconductor |
256Mb E-die SDRAM Specification | |
4 | K4S560832E-TL75 |
Samsung semiconductor |
256Mb E-die SDRAM Specification | |
5 | K4S560832A |
Samsung semiconductor |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | |
6 | K4S560832B |
Samsung semiconductor |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |