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VS3506AP Vanguard Semiconductor P-Channel Advanced Power MOSFET Datasheet


Vanguard Semiconductor
VS3506AP
Part Number VS3506AP
Manufacturer Vanguard Semiconductor
Description Features  P-Channel,-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3506AP -30V/-75A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V...
Features
 P-Channel,-5V Logic Level Control
 Low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 Enhancement mode
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS3506AP -30V/-75A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 5.3 mΩ 8.4 mΩ -75 A PDFN5x6 Part ID VS3506AP Package Type PDFN5x6 Marking 3506AP Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current I...

Document Datasheet VS3506AP datasheet pdf (350.44KB)




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VS3506AP Similar Datasheet

Part Number Description
VS3506AD
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P-Channel Advanced Power MOSFET
Features  P-Channel,-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3506AD -30V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6.5 mΩ 10 mΩ -80 A TO-252 Part ID VS3506AD Package Type TO-252 Marking 3506AD Tape and reel information 2500PCS/Reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain ...
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P-Channel Advanced Power MOSFET
Features  P-Channel,-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VS3506AE -30V/-60A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V 6 mΩ 10 mΩ I D -60 A PDFN3333 Part ID VS3506AE Package Type PDFN3333 Marking 3506AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V EAS ...
VS3506AS
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P-Channel Advanced Power MOSFET
Features  P-Channel,-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS3506AS -30V/-19A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V 5.7 mΩ R @DS(on),TYP VGS=-4.5 V 8.6 mΩ I D -19 A SOP8 Part ID VS3506AS Package Type SOP8 Marking 3506AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissi...
VS3506AT
manufacturer
Vanguard Semiconductor
P-Channel Advanced Power MOSFET
Features  P-Channel,-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3506AT -30V/-100A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6.2 mΩ 10 mΩ -100 A TO-220AB Part ID VS3506AT Package Type TO-220AB Marking 3506AT Tape and reel information 50pcs/Tube Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ①...
VS3506ATD
manufacturer
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P-Channel Advanced Power MOSFET
Features  P-Channel,-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3506ATD -30V/-100A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6 mΩ 9 mΩ -100 A TO-263 Part ID VS3506ATD Package Type TO-263 Marking Tape and reel information 3506ATD 1000pcs/Reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① ...




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