VS30P39AP |
Part Number | VS30P39AP |
Manufacturer | Vanguard Semiconductor |
Description | VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and i... |
Features |
Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
Description
VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications.
V DS R DS(on),typ @ VGS= -10V ID
-30 V 9 mΩ -39 A
Absol... |
Document |
VS30P39AP Data Sheet
PDF 265.06KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | VS30P39AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
2 | VS30P60AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
3 | VS30P60AI |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VS3009DS |
Vanguard Semiconductor |
30V/8A Dual N-Channel Advanced Power MOSFET | |
5 | VS30150AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VS3019AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |