PDN4911S |
Part Number | PDN4911S |
Manufacturer | Potens semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
-40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications Applications POL Applications Load Switch LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=100℃) Drain Current – Pulsed1 Power Dissipation (TA=25℃) P... |
Document |
PDN4911S Data Sheet
PDF 776.83KB |
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