PDN3909S |
Part Number | PDN3909S |
Manufacturer | Potens semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
-30V,-5.1A, RDS(ON) =32mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications Applications Notebook Load Switch Battery Protection Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Si... |
Document |
PDN3909S Data Sheet
PDF 937.88KB |
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