PDN9313S |
Part Number | PDN9313S |
Manufacturer | Potens semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
-25V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Po... |
Document |
PDN9313S Data Sheet
PDF 575.78KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PDN001 |
California Micro Devices Corp |
SCHOTTKY DIODE NETWORK | |
2 | PDN001N60S |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDN001R |
California Micro Devices Corp |
SCHOTTKY DIODE NETWORK | |
4 | PDN001T |
California Micro Devices Corp |
SCHOTTKY DIODE NETWORK | |
5 | PDN002 |
California Micro Devices Corp |
17 CHANNEL ESD PROTECTION ARRAY | |
6 | PDN002QR |
California Micro Devices Corp |
17 CHANNEL ESD PROTECTION ARRAY |