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PDN2307 |
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| Part Number | PDN2307 |
| Manufacturer | Potens semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
-20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications Applications Notebook Load Switch Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation ... |
| Document |
 PDN2307 Data Sheet
PDF 578.92KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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