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PDN3916S |
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| Part Number | PDN3916S |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
30V,5.1A , RDS(ON)=35mΩ@VGS=10V Improved dv/dt capability Fast switching Green Device Available Applications MB / VGA / Vcore Load Switch Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (TA=25℃) Power Dissipation ... |
| Document |
 PDN3916S Data Sheet
PDF 654.37KB |
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Desde 2024. D4U Semiconductor.
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