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PDN2312S |
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| Part Number | PDN2312S |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Di... |
| Document |
 PDN2312S Data Sheet
PDF 403.85KB |
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Desde 2024. D4U Semiconductor.
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