HYB25D512400BF Qimonda SDRAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

HYB25D512400BF

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Part Number	HYB25D512400BF
Manufacturer	Qimonda
Description	The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate SDRA...
Features	• Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is center-aligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst Lengths: 2, 4, or 8 • CAS Latency: (1.5), 2, 2.5,...
Document	HYB25D512400BF Data Sheet PDF 768.99KB

No.	Parte #	Fabricante	Descripción
1	HYB25D512400BC	Infineon	512Mbit Double Data Rate SDRAM
2	HYB25D512400BC	Qimonda	(HYB25D512xx0Bx) 512-Mbit Double-Data-Rate SDRAM
3	HYB25D512400BE	Infineon	512Mbit Double Data Rate SDRAM
4	HYB25D512400BE	Qimonda	(HYB25D512xx0Bx) 512-Mbit Double-Data-Rate SDRAM
5	HYB25D512400BF	Infineon	512Mbit Double Data Rate SDRAM
6	HYB25D512400BT	Infineon	512Mbit Double Data Rate SDRAM