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MSS39 |
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| Part Number | MSS39 |
| Manufacturer | Aeroflex |
| Description | The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz. Fea... |
| Features |
• Very low 1/f Noise • Detector applications to 40 GHz • Chip, beam lead or packaged devices Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 100 mW, derated linearly to zero at TA = +150 ºC + 230 ºC for 5 sec. 4 grams Chip Electrical Specifications, TA = 25 ºC Model VBR VF CJ MIN TYP MAX V V pF MSS39,045-C15 5.0 0.40 0.10 MSS39,048-C15 5.0 0.39 0.15 Test Conditions IR = 10 μA ... |
| Document |
 MSS39 Data Sheet
PDF 448.77KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSS30-046-C15 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
| 2 | MSS30-046-P55 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
| 3 | MSS30-046-P86 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
| 4 | MSS30-050-C15 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
| 5 | MSS30-050-P55 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
| 6 | MSS30-050-P86 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
|
Desde 2024. D4U Semiconductor.
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