MSS50-448-H40 |
Part Number | MSS50-448-H40 |
Manufacturer | MA-COM |
Description | The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained w... |
Features |
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS50-048-C15 Single Junction 0.5 VBR Min. V 4 CJ Typ. / Max. pF 0.12 / 0.15 MSS50-062-C16 Test Conditions Single ... |
Document |
MSS50-448-H40 Data Sheet
PDF 650.15KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MSS50-448-B40 |
MA-COM |
High Barrier Silicon Schottky Diodes | |
2 | MSS50-448-E45 |
MA-COM |
High Barrier Silicon Schottky Diodes | |
3 | MSS50-048-C15 |
MA-COM |
High Barrier Silicon Schottky Diodes | |
4 | MSS50-048-P55 |
MA-COM |
High Barrier Silicon Schottky Diodes | |
5 | MSS50-048-P86 |
MA-COM |
High Barrier Silicon Schottky Diodes | |
6 | MSS50-062-C16 |
MA-COM |
High Barrier Silicon Schottky Diodes |