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MSS30-046-P86 |
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| Part Number | MSS30-046-P86 |
| Manufacturer | MA-COM |
| Description | The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained w... |
| Features |
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Ty... |
| Document |
 MSS30-046-P86 Data Sheet
PDF 666.71KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSS30-046-P55 |
MA-COM |
Low Barrier Silicon Schottky Diodes |
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| 2 | MSS30-046-C15 |
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| 3 | MSS30-050-C15 |
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| 4 | MSS30-050-P55 |
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| 5 | MSS30-050-P86 |
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Low Barrier Silicon Schottky Diodes |
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| 6 | MSS30-142-B10B |
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Low Barrier Silicon Schottky Diodes |
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Desde 2024. D4U Semiconductor.
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