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2N6480 |
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| Part Number | 2N6480 |
| Manufacturer | RCA |
| Description | _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702 OOCD3LJ1] Solid State Division Power Transistors 2N6479 2N6481 2N6480 2N6482 Radiation-Hardened Silicon N-P-N Power Transi... |
| Features |
07B, TAB10D, and TA8100B. respectively.
MAXIMUM RATINGS, Absolute ·Maximum Values: * COLLECTOR ·TO ·BASE VOLTAGE . . . . . . . . COLLECTOR ·TO ·EMITTER SUSTAINING VOLTAGE: With external base ·to ·emitter resistance (RBEI ::;; 100 n . With base open. . . . . . . . . * EMITTER ·TO ·BASE VOLTAGE • CONTINUOUS COLLECTOR CURRENT • PEAK COLLECTOR CURRENT. * CONTINUOUS BASE CURRENT . * TRANSISTOR DISSIPATION: At case temperatiJres up to 25°C. At case temperatures above 25°C • TEMPERATURE RANGE: Storage and Operating (Junction). . . . . . . . • TERMINAL TEMPERATURE (During Soldering): At distance ~ 1/32 in. (... |
| Document |
 2N6480 Data Sheet
PDF 499.41KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6481 |
RCA |
Power Transistor |
|
| 2 | 2N6482 |
RCA |
Power Transistor |
|
| 3 | 2N6483 |
Intersil |
Low Noise Dual N-Channel JFET |
|
| 4 | 2N6483 |
National Semiconductor |
N-Channel Monolithic Dual JFET |
|
| 5 | 2N6484 |
National Semiconductor |
N-Channel Monolithic Dual JFET |
|
| 6 | 2N6484 |
Intersil |
Low Noise Dual N-Channel JFET |
|
Desde 2024. D4U Semiconductor.
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