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2SC1955 |
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| Part Number | 2SC1955 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES • . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at ... |
| Features |
• . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO Vebo ic ?C T J T stg RATING 35 17 3.5 0.8 7.5 175 -65 ~175 UNIT V V V A W °C °C Unit in mm J^9.Z9lllAX. 0'a45MAX 1 1 00. A 5 1 0&O8 c5 - s to «5 - M s 03 H ? |
| Document |
 2SC1955 Data Sheet
PDF 61.42KB |
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