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2SC506 |
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| Part Number | 2SC506 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2S... |
| Features |
• High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1. EMITTER 2. BASE 200 mA 3. COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.75 °C TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=2... |
| Document |
 2SC506 Data Sheet
PDF 116.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR |
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| 2 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor |
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| 3 | 2SC5002 |
Sanken electric |
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| 4 | 2SC5002 |
SavantIC |
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| 5 | 2SC5002 |
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| 6 | 2SC5003 |
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Desde 2024. D4U Semiconductor.
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