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2N5304 |
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| Part Number | 2N5304 |
| Manufacturer | ETC |
| Description | 2N5304 (SILICON) RADIATION-R ESISTANT NPN SI LICON POWER TRANSISTOR designed for high·speed switching and wide· band amplifier ap- plications in radiation environments. • Coliector·Emitter Sustaining... |
| Features |
dc, IS" 04 Adc)
Symbol
Min
hFE 5.0
'CEX
VCE/sad
MAXIMUM RATINGS Rating
Cotlector-BaseVoltage Coliector ·Emitter Voltage Emitter-Base Voltage Collector Current Contmuous Base Current Total Device Dlssipatlon@TC" 12SoC Derate above 125°C Operating and Storage Junction Temperature Ranae Fast Neutron Rachatlon Lllvel THERMAL CHARACTERISTICS Thermal Resistance, JunctIOn to case Symbol VCR VeEO Po Symbol ·1ndlcates JEOEC Registered Data Mox 50 1.5 50 40 6.0 10 2.0 25 0333 -65 to +200 Mo. 3. FIGURE 1 - POWER DERATING 5 " I'.. 5 • "'-I, - D • " rn m m ~ ~ ~ rn ~ ~ m Te, CASE TEMPERATUR... |
| Document |
 2N5304 Data Sheet
PDF 343.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5301 |
Seme LAB |
Bipolar NPN Device |
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| 3 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2N5301 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
| 5 | 2N5301 |
Multicomp |
Bipolar Transistor |
|
| 6 | 2N5301 |
NTE |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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