BC337 ON Semiconductor NPN Epitaxial Silicon Transistor Datasheet. existencias, precio

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BC337

ON Semiconductor
BC337
BC337 BC337
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Part Number BC337
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description TO−92 3 4.825X4.76 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PA...
Features
• Switching and Amplifier Applications
• Suitable for AF−Driver Stages and Low−Power Output Stages
• Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage 50 V VCEO Collector−Emitter Voltage 45 V VEBO Emitter−Base Voltage 5 V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not...

Document Datasheet BC337 Data Sheet
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