logo

VS3640DE Vanguard Semiconductor Dual N-Channel Advanced Power MOSFET Datasheet


Vanguard Semiconductor
VS3640DE
Part Number VS3640DE
Manufacturer Vanguard Semiconductor
Description Features  Dual N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3640DE 30V/24A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID...
Features
 Dual N-Channel,5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant
 VS3640DE 30V/24A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 15 mΩ 24 mΩ 24 A PDFN3333 Part ID VS3640DE Package Type PDFN3333 Marking 3640DE Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain c...

Document Datasheet VS3640DE datasheet pdf (596.81KB)




VS3640DE Distributor






VS3640DE Similar Datasheet

Part Number Description
VS3640AC
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VS3640AC 30V/6A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 19 mΩ 27 mΩ 6A SOT23 Part ID VS3640AC Package Type SOT23 Marking VS03 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating te...
VS3640AD
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VS3640AD 30V/28A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 16 mΩ 24 mΩ 28 A TO-252 Part ID VS3640AD Package Type TO-252 Marking 3640AD Tape and reel information 2500pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dis...
VS3640AE
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VS3640AE 30V/25A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 13.5 mΩ 23 mΩ 25 A PDFN3333 Part ID VS3640AE Package Type PDFN3333 Marking 3640AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25...
VS3640AS
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS3640AS 30V/11A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 11 A SOP8 Part ID VS3640AS Package Type SOP8 Marking 3640AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Sour...
VS3640BC
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  N-Channel,2.5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VS3640BC 30V/5A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 30 V 29 mΩ 36 mΩ 5A SOT23 Part ID VS3640BC Package Type SOT23 Marking VS06 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=4.5V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA...
VS3640DB
manufacturer
Vanguard Semiconductor
N-Channel Advanced Power MOSFET
Features  Dual N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V ① IDM Pulse drain current tested ② IDSM Continuous drain current @VGS=10V PD Maximum power dissipa...
VS3640DP
manufacturer
Vanguard Semiconductor
Dual N-Channel Advanced Power MOSFET
Features  Dual N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3640DP 30V/30A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 30 A PDFN5x6 Part ID VS3640DP Package Type PDFN5x6 Marking 3640DP Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC ...
VS3640DS
manufacturer
Vanguard Semiconductor
Dual N-Channel Advanced Power MOSFET
VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel,5V Logic Level Control  Enhancement mode  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 16 24 9 SOP8 V mΩ mΩ A Part ID VS3640DS Package Type SOP8 Marking 3640DS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source v...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy