CEM2192 |
Part Number | CEM2192 |
Manufacturer | CET |
Description | CEM2192 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low ... |
Features |
20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 8 IDM 32
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Therm... |
Document |
CEM2192 Data Sheet
PDF 384.29KB |
Similar Datasheet
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